1 transistors publication date: march 2003 sjc00123bed 2SC2778 silicon npn epitaxial planar type for high-frequency amplification features ? optimum for rf amplification, oscillation, mixing, and if of fm/am radios ? mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 30 v collector-emitter voltage (base open) v ceo 20 v emitter-base voltage (collector open) v ebo 5v collector current i c 30 ma collector power dissipation p c 200 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 030v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 020v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 05v forward current transfer ratio * h fe v ce = 10 v, i c = 1 ma 70 250 ? transition frequency f t v cb = 10 v, i e = ? 1 ma, f = 200 mhz 150 230 mhz reverse transfer capacitance c re v cb = 10 v, i e = ? 1 ma, f = 10.7 mhz 1.3 pf (common emitter) unit: mm electrical characteristics t a = 25 c 3 c rank b c h fe 70 to 160 110 to 250 note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification 1: base 2: emitter 3: collector eiaj: sc-59 mini3-g1 package 0.40 +0.10 ?0.05 (0.65) 1.50 +0.25 ?0.05 2.8 +0.2 ?0.3 2 1 3 (0.95) (0.95) 1.9 0.1 2.90 +0.20 ?0.05 0.16 +0.10 ?0.06 0.4 0.2 5? 10? 0 to 0.1 1.1 +0.2 ?0.1 1.1 +0.3 ?0.1 marking symbol: k
2SC2778 2 sjc00123bed i c ? v be v ce(sat) ? i c h fe ? i c p c ? t a i c ? v ce i b ? v be f t ? i e z rb ? i e c re ? v ce 0 160 40 120 80 0 240 200 160 120 80 40 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 018 612 0 12 10 8 6 4 2 t a = 25 c i b = 100 a 80 a 60 a 40 a 20 a collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 120 40 80 160 0 12 10 8 6 4 2 v ce = 10 v t a = 25 c base current i b ( a ) collector current i c ( ma ) 0 2.0 1.6 0.4 1.2 0.8 0 60 50 40 30 20 10 v ce = 10 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0.1 1 10 100 0 300 250 200 150 100 50 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) ? 0.1 ? 1 ? 10 ? 100 0 600 500 400 300 200 100 t a = 25 c v cb = 10 v 6 v transition frequency f t ( mhz ) emitter current i e ( ma ) ? 0.1 ? 1 ? 10 0 80 60 20 40 f = 2 mhz t a = 25 c v cb = 6 v 10 v reverse transfer impedance z rb ( ? ) emitter current i e ( ma ) 0.1 1 10 100 0 2.4 2.0 1.6 1.2 0.8 0.4 i c = 1 ma f = 10.7 mhz t a = 25 c collector-emitter voltage v ce ( v ) reverse transfer capacitance c re (pf) (common emitter)
2SC2778 3 sjc00123bed c ob ? v cb b ie ? g ie b re ? g re b fe ? g fe b oe ? g oe 1 10 100 0 3.2 2.4 0.8 1.6 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) 020 16 412 8 0 12 10 8 6 4 2 y ie = g ie + jb ie v ce = 10 v f = 0.45 mhz ? 1 ma ? 2 ma ? 4 ma ? 7 ma 58 25 10.7 100 i e = ? 0.1 ma input conductance g ie ( ms ) input susceptance b ie ( ms ) ? 0.5 0 ? 0.1 ? 0.4 ? 0.2 ? 0.3 ? 3.0 0 ? 0.5 ? 1.0 ? 1.5 ? 2.0 ? 2.5 y re = g re + jb re v ce = 10 v f = 0.45 mhz i e = ? 7 ma ? 2 ma ? 4 ma ? 1 ma ? 0.4 ma 25 58 100 10.7 reverse transfer conductance g re ( ms ) reverse transfer susceptance b re ( ms ) 0 100 80 20 60 40 ? 120 0 ? 20 ? 40 ? 60 ? 80 ? 100 y fe = g fe + jb fe v ce = 10 v f = 0.45mhz 10.7 10.7 10.7 0.45 ? 0.4 ma ? 0.1 ma ? 1 ma ? 2 ma ? 4 ma i e = ? 7 ma 100 100 100 100 25 25 25 58 58 58 58 forward transfer conductance g fe ( ms ) forward transfer susceptance b fe ( ms ) 0 1.0 0.8 0.2 0.6 0.4 0 1.2 1.0 0.8 0.6 0.4 0.2 y oe = g oe + jb oe v ce = 10 v f = 0.45 mhz i e = ? 0.1 ma ? 7 ma ? 4 ma ? 2 ma ? 1 ma ? 0.4 ma 58 10.7 25 100 output conductance g oe ( ms ) output susceptance b oe ( ms )
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
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